发明名称 |
Method for cleaning a process chamber |
摘要 |
Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.
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申请公布号 |
US2005211265(A1) |
申请公布日期 |
2005.09.29 |
申请号 |
US20050132895 |
申请日期 |
2005.05.19 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ZHENG YI;SINGH VINITA;NEMANI SRINIVAS D.;CHEN CHEN-AN;LEE JU-HYUNG;VENKATARAMAN SHANKAR |
分类号 |
B08B7/00;C23C16/44;(IPC1-7):B08B6/00 |
主分类号 |
B08B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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