| 摘要 |
<P>PROBLEM TO BE SOLVED: To shorten the time required in initializing a nonvolatile storage device. <P>SOLUTION: In the nonvolatile memory composed of multi-value memory cells, each page constituting a physical block is divided into four areas. Optional data are written in the first area (512B); an error correction code for correcting the error of the optional data written in the first area is written in the second area (10B); management information associated with the optional data written in the first area is written in the third area (3B); and an error correction code for correcting the management information written in the third area is written in the fourth area (3B). Using the third and the fourth areas as the binary memory, data sustaining capability is improved, and sufficient data sustaining reliability can be obtained even with an error correction circuit having low correction capability. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
