| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma CVD (chemical vapor deposition) apparatus with which a thin film having uniform thickness can be formed on a large area substrate with a high frequency, and of which the constitution is simple. <P>SOLUTION: The high frequency current supplied from a high frequency electric source 20 connected to a flat electrode 2a is caused to flow through the surface of the mutually and electrically connected plurality of flat electrodes 2a, 2b, 2c, constituting high frequency voltage impressed electrode layer 2 with a skin effect and the unbalance of the high frequency power is eliminated till reaching the flat electrode 2c set in parallel facing an earth electrode 4. Further, since the flat electrode 2c is constituted so that it is divided into the plurality of electrodes having the electrode surface electrically connected with each other, the high frequency current course is shortened on the flat electrode 2c, and the potential difference on the whole flat electrode 2c becomes small. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
