| 摘要 |
The invention relates to a bipolar transistor, comprising a base with an epitaxial base layer and a raised base connector region, which surrounds the emitter, enclosed in a spacer of insulating material, in the lateral direction parallel to the substrate surface. The base layer is raised in a vertical direction, perpendicular to the substrate surface. An emitter with a T-shaped cross-sectional profile is laterally separated from the outer base section by means of a spacer made from an insulating material. The vertical T-arm thereof adjoins the inner base layer at the lower end thereof. The lateral extension of the spacer has increasing height above the base layer from the boundary thereof with the base layer onwards, whereby a first boundary surface, formed by the emitter and spacer, intersects a second boundary surface, formed by the emitter and inner base section, at a right angle, or an obtuse angle and a third boundary surface, formed by the spacer and the outer base section, intersects the second boundary surface, at a second obtuse angle, greater than the first angle. |
