发明名称 Plating method
摘要 A cathode potential is applied to a conductive layer formed on a substrate having a depression pattern. A plating solution in electrical contact with an anode is supplied to the conductive layer to form a plating film on the conductive layer. At this time, the plating solution is supplied by causing an impregnated member containing the plating solution to face the conductive layer. Since the plating solution stays in the depression, a larger amount of plating solution is supplied than on the upper surface of the substrate, and the plating rate of the plating film in the depression increases. Consequently, the plating film can be preferentially formed in the depression such as a groove or hole.
申请公布号 US2005211560(A1) 申请公布日期 2005.09.29
申请号 US20050135328 申请日期 2005.05.24
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MATSUDA TETSUO;KANEKO HISASHI;OKUMURA KATSUYA
分类号 C25D7/12;C25D5/02;C25D5/06;C25D5/16;C25D17/00;C25D17/06;C25D17/12;H01K3/10;H01L21/288;H01L21/768;H05K3/42;(IPC1-7):C25D5/06 主分类号 C25D7/12
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