发明名称 Memory device with an active material embedded in an insulating material
摘要 The invention relates to a method for producing a memory device, and to a memory device having an active material adapted to be placed in a more or less conductive state by means of appropriate switching processes, the active material is embedded in electrically insulating material.
申请公布号 US2005212024(A1) 申请公布日期 2005.09.29
申请号 US20050086997 申请日期 2005.03.23
申请人 INFINEON TECHNOLOGIES AG 发明人 HAPP THOMAS
分类号 G11C11/46;G11C13/00;H01L21/8234;H01L21/8244;H01L27/108;H01L27/24;H01L29/76;H01L29/94;H01L31/119;H01L45/00;(IPC1-7):H01L21/823;H01L21/824 主分类号 G11C11/46
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