| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a light emitting diode which can improve a yield, an electron transmission property, a heat dissipation property, and a luminance by eliminating problems with the heat dissipation property, light shielding or absorbing property, etc. in the prior art light emitting diode. <P>SOLUTION: A metallic layer formed by a physical or chemical method as a permanent base is replaced by a sapphire base or a silicon carbide base in a diode. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
