| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method by which film deposition by a sputtering process with a high resistor material as a target is possible in a low frequency of <1 MHz. SOLUTION: The film deposition method by a sputtering process using a target composed of a material having a specific resistance of≥1×10<SP>3</SP>Ωcm and intermittently applying negative voltage to the target is characterized in that the application of negative voltage is performed at the frequency of <1 MHz while feeding electrons to the surface of the target. The film deposition method by a sputtering process using a target composed of a material having a specific resistance of≥1×10<SP>3</SP>Ωcm and applying negative voltage to the target is characterized in that the method is implemented while feeding electrons to the surface of the target with the use of an electron gun. COPYRIGHT: (C)2005,JPO&NCIPI
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