发明名称 |
Local stress control for CMOS performance enhancement |
摘要 |
A semiconductor device and method for forming the same for improving charge mobility in NMOS and PMOS devices simultaneously, the method including forming a first dielectric layer including a stress type selected from the group consisting of tensile stress and compressive stress over the respective PMOS and NMOS device regions; removing a portion of the first dielectric layer overlying one of the PMOS and NMOS device regions; forming a second dielectric layer including a stress type opposite from the first dielectric layer stress type over the respective PMOS and NMOS device regions; and, removing a portion of the second dielectric layer overlying one of the PMOS and NMOS device regions having an underlying first dielectric layer to form a compressive stress dielectric layer over the PMOS device region and a tensile stress dielectric layer over the NMOS device region.
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申请公布号 |
US2005214998(A1) |
申请公布日期 |
2005.09.29 |
申请号 |
US20040810795 |
申请日期 |
2004.03.26 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN CHIEN-HAO;CHEN CHIA-LIN;LEE TZE-LIANG;CHEN SHIH-CHANG |
分类号 |
H01L21/44;H01L21/768;H01L21/8238;(IPC1-7):H01L21/44;H01L21/823 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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