发明名称 |
Thin-oxide devices for high voltage I/O drivers |
摘要 |
An I/O driver includes a pull-down module and pull-up module. The pull-down module has one or more NMOS transistors serially coupled between ground and an output node. The pull-up module has one or more PMOS transistors serially coupled between a first voltage and the output node. The gates of the PMOS and NMOS transistors are controlled by a set of differential biases for selectively pulling the output node to the first voltage or ground. The differential biases are separately set for each of the transistors so that a voltage difference across each of the transistors does not exceed a predetermined value, thereby preventing the same from damage.
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申请公布号 |
US2005212558(A1) |
申请公布日期 |
2005.09.29 |
申请号 |
US20050127452 |
申请日期 |
2005.05.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO. |
发明人 |
CHUNG SHIEN C. |
分类号 |
H03B1/00;H03K19/003;H03K19/0175;(IPC1-7):H03K19/017 |
主分类号 |
H03B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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