发明名称 Photo-detector and related methods
摘要 An apparatus comprising at least one multilayer wafer includes a device layer adjacent to a barrier layer, and the device layer includes at least two photoconductive regions separated by an etched channel extending through the device layer. In some instances the apparatus may be an accelerometer having two photodiodes formed on a silicon-on-insulator (SOI) wafer with the photodiodes defined by one or more etched channels extending through the device layer of the SOI wafer. Also disclosed are methods for forming such an apparatus.
申请公布号 US2006125068(A1) 申请公布日期 2006.06.15
申请号 US20040009438 申请日期 2004.12.09
申请人 ABBINK HENRY C 发明人 ABBINK HENRY C.
分类号 H01L23/02 主分类号 H01L23/02
代理机构 代理人
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