| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of an MOCVD device or a semiconductor layer, capable of preventing the depositing of reaction products on a region except a substrate and capable of growing a semiconductor with excellent reproducibility. SOLUTION: The organic metal gas phase growing device is provided with a chamber 10 for retaining the substrate 1A on a susceptor 15 arranged therein, a cooling gas introducing port 2d provided from the wall unit of the chamber 10 to the inside of the chamber to introduce cooling gas into the chamber 10, process gas introducing ports 2a, 2b, provided from the wall unit of the chamber 10 to the inside of the same so as to be independent from the cooling gas introducing port 2d to introduce material gas into the chamber 10, and a process gas flow channel provided so as to be continuous from the process gas introducing ports 2a, 2b to carry the material gas introduced from the process gas introducing ports 2a, 2b onto the substrate 1A. The cooling gas introducing port 2d is installed at a position such that the cooling gas hits the outer wall of the process gas flow channel. COPYRIGHT: (C)2006,JPO&NCIPI
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