| 摘要 |
PROBLEM TO BE SOLVED: To solve the problems that variations in signal output are caused between bits when a p-type MOS is used in the transmission circuit of a photoelectric conversion circuit since the p-type MOS and an n-type one are mixed in the photoelectric conversion circuit, although the photoelectric conversion device of a semiconductor image sensor uses a p-type substrate in many cases; and the variations become large when a number of semiconductor chips are continuously mounted in series and hence signal correction cannot be made. SOLUTION: Light is received by an optical sensor on a p-type semiconductor substrate for composing one portion of the photoelectric conversion device. The photoelectric conversion circuit comprising only an n-channel transistor and the output circuit are composed by using a source follower circuit in a transmission circuit for transmitting photoelectric-converted charges. A signal voltage and a reference voltage are outputted, based on an initialization signal from a shift resistor, a reset signal, a read signal, and a bit selection signal. COPYRIGHT: (C)2005,JPO&NCIPI
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