| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photosensitive composition suitable for exposure to light at ≤200 nm wavelength, in particular, by an ArF excimer laser, having preferable sensitivity and resolution applicable for a thin film of ≤250 nm film thickness, resulting a preferable pattern profile, less pattern collapse and improved line edge roughness, exposure latitude and focus latitude, and to provide a method for forming a pattern by using the composition. <P>SOLUTION: The photosensitive composition contains: (A) a resin which is decomposed by the effect of an acid to increase solubility with an alkali developer solution, (B) a compound which generates an acid by irradiation of active light or radiation; and (C1) a compound having ≤1,000 molecular weight and an alicyclic and aromatic ring. Or, the photosensitive composition contains: (A) a resin which is decomposed by the effect of an acid to increase solubility with an alkali developer solution; (B) a compound which generates an acid by irradiation of active light or radiation; and (C2) a resin containing a hydroxystyrene unit. The method for forming a pattern is carried out by using the above composition. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
