发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a flash memory capable of increasing an operational speed in a burst read-out mode without improving the performance of a transistor. SOLUTION: This semiconductor memory which is furnished with a function of a continuous read-out operation of data by synchronizing with a clock, includes; a memory array consisting of a memory element and a redundant memory element; a burst counter setting an upper-order address to a memory address and a lower-order address to a burst address to output them with the clock synchronization; a sense amplifier for outputting the data of the memory element selected by the memory address; a decoder for decoding the burst address; an address latch for synchronizing the burst address with the clock for storage; a page selector for selecting the data input in accordance with the burst address of the address latch; a redundancy replacement circuit for replacing the data with the redundancy data when the memory element is defective; and an output latch for outputting the data with the clock synchronization. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005267783(A) 申请公布日期 2005.09.29
申请号 JP20040080554 申请日期 2004.03.19
申请人 TOPPAN PRINTING CO LTD;SHARP CORP 发明人 TAKASHIMA HIROSHI;OHORI SHOICHI;NISHIYAMA MASUHARU;HIRANO MAKOTO;MATOBA SHINJI;ASANO MASAMICHI;MAEDA KENGO;TANIGAWA AKIRA
分类号 G11C16/02;G11C11/401;G11C16/06;G11C29/00;G11C29/04;(IPC1-7):G11C29/00 主分类号 G11C16/02
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