发明名称 |
SEMICONDUCTOR MEMORY |
摘要 |
PROBLEM TO BE SOLVED: To provide a flash memory capable of increasing an operational speed in a burst read-out mode without improving the performance of a transistor. SOLUTION: This semiconductor memory which is furnished with a function of a continuous read-out operation of data by synchronizing with a clock, includes; a memory array consisting of a memory element and a redundant memory element; a burst counter setting an upper-order address to a memory address and a lower-order address to a burst address to output them with the clock synchronization; a sense amplifier for outputting the data of the memory element selected by the memory address; a decoder for decoding the burst address; an address latch for synchronizing the burst address with the clock for storage; a page selector for selecting the data input in accordance with the burst address of the address latch; a redundancy replacement circuit for replacing the data with the redundancy data when the memory element is defective; and an output latch for outputting the data with the clock synchronization. COPYRIGHT: (C)2005,JPO&NCIPI
|
申请公布号 |
JP2005267783(A) |
申请公布日期 |
2005.09.29 |
申请号 |
JP20040080554 |
申请日期 |
2004.03.19 |
申请人 |
TOPPAN PRINTING CO LTD;SHARP CORP |
发明人 |
TAKASHIMA HIROSHI;OHORI SHOICHI;NISHIYAMA MASUHARU;HIRANO MAKOTO;MATOBA SHINJI;ASANO MASAMICHI;MAEDA KENGO;TANIGAWA AKIRA |
分类号 |
G11C16/02;G11C11/401;G11C16/06;G11C29/00;G11C29/04;(IPC1-7):G11C29/00 |
主分类号 |
G11C16/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|