| 摘要 |
PROBLEM TO BE SOLVED: To properly correct the shape, arrangement and the number of bumps for flip chip while reducing VF in a Schottky barrier diode having two poles formed on the same surface and arranged such that flip chip bonding can be carried out through bumps provided on that surface. SOLUTION: VF is reduced by snaking the isolation region between an anode (A) and a cathode (K) and lengthening the opposing length W of A-K thereby increasing the cross-section of a lateral current passage. Two bumps are formed on the outside of the snaking amplitude range B of electrode metal films 5 and 6 (or a single elongated bump is formed). Priority is given to reduction in chip size by setting the number of repetition of snaking to 1. VF is reduced furthermore by making A aperture 31 larger than K aperture 31 thereby increasing the Schottky junction area, and forming a metal 8 on the rear surface of a substrate 1. COPYRIGHT: (C)2005,JPO&NCIPI |
