Leakage control in semiconductor apparatus and fabricating method

摘要

A source region and a drain region spaced apart from each other are provided in a semiconductor substrate separating adjacent devices by shallow trench isolation (STI). The semiconductor substrate between the source region and the drain region is selectively removed so as to form a recess for a gate electrode. A recess for the gate electrode is formed in the recess. The gate electrode is formed in the recess via a gate insulating film and a gate coating. The underside of the gate insulating film is located below the underside of a source extension region and a drain region.