| 摘要 |
PROBLEM TO BE SOLVED: To provide a split gate-type nonvolatile semiconductor memory device and a manufacturing method of the same. SOLUTION: A gate insulating layer and a floating gate conductive layer are formed on a semiconductor substrate, a mask layer pattern is formed, a first sacrifice spacer is formed on both walls thereof, an inter-gate insulating layer is formed on the floating gate insulating conductive layer, the first sacrifice spacer is removed, etching is performed on the floating gate conductive layer with the mask layer pattern and inter-gate insulating layer as the masks, a tunneling insulating layer is formed on an exposed portion thereof, a control gate conductive layer is formed on the entire surface of the semiconductor substrate, a second sacrifice spacer is formed thereon, etching is performed on the control gate conductive layer with it as a mask to form the control gate, and etching is performed on the remaining mask layer pattern, inter-gate insulating layer and exposed floating gate conductive layer to form the floating gate. COPYRIGHT: (C)2005,JPO&NCIPI
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