ORGANIC VERTICAL TRANSISTOR AND PROCESS FOR FABRICATING SAME

摘要

An organic vertical transistor in which integration is facilitated and a short channel can be attained while increasing the on current and decreasing the off current, and its fabricating process. The organic vertical transistor comprises a source electrode formed on a substrate in the vertical direction, an insulating film between source-drain electrodes formed on the source electrode in the vertical direction, a drain electrode formed on the insulating film between source-drain electrodes in the vertical direction, an organic semiconductor active layer so formed on the substrate in the horizontal direction that the opposite sides of the source electrode, the insulating film between source-drain electrodes and the drain electrode are in contact therewith, a gate insulating film formed in contact with the organic semiconductor active layer, and a gate electrode formed in contact with the gate insulating film. The gate electrode, the gate insulating film and the organic semiconductor active layer are processed respectively.