MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND MANUFACTURING EQUIPMENT THEREOF

摘要

PROBLEM TO BE SOLVED: To improve the activation rate of an impurity layer formed in an Si substrate. SOLUTION: At the time of forming a p+collector layer of NPT type IGBT using an FZ-N substrate, boron is implanted into the rear face while heating the FZ-N substrate at 400°C-500°C. The ion implantation boron at room temperature is enriched from a shallow domain to a deep domain in accordance with the rise of ion implantation temperature. The activation rate becomes about 2% at the ion implantation temperature of 400°C and becomes about 5% at 500°C, so that a higher activation rate can be obtained than the activation rate of about 1.8% when performing electric furnace annealing of one hour at 400°C after the ion implantation at room temperature. Consequently, the p layer can be activated by the effect of substrate heating, and the excellent p+collector layer can be formed. COPYRIGHT: (C)2005,JPO&NCIPI