| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can simplify a manufacturing process, and to provide its manufacturing method. SOLUTION: The semiconductor device 1 is a BiCMOS semiconductor device, and is such that a bipolar transistor 20, an NMOS transistor 30, and a PMOS transistor 40 are formed as semiconductor elements on a semiconductor substrate 10. The semiconductor elements are separated from each other by shallow trench isolation (STI) 12 formed in the surface layer of the semiconductor substrate 10. In the STI 12 surrounding the collector layer 220 of the bipolar transistor 20, a P<SP>+</SP>-type base electrode 242 is formed. To be more specific, the base electrode 242 is formed in part of the surface layer of the STI 12. COPYRIGHT: (C)2005,JPO&NCIPI
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