| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing processing for producing semiconductor substrates and devices on an SOI, while using an SPER technique, such that a single-crystalline silicon layer is produced on an insulator. SOLUTION: The method of manufacturing a semiconductor device includes a step of providing, on the semiconductor device, a device with a single-crystalline semiconductor layer disposed on an insulating layer. The method is characterized by the following steps providing a mask on the semiconductor layer to provide first shielded portions and first unshielded portions; turning the first unshielded portions into amorphous form to form first amorphized portions of the single-crystalline semiconductor layer; injecting first dopant into the first amorphized portions; and applying a first solid phase epitaxial regrowth process to the semiconductor device, while using the first shielded portions as single-crystal seeds. COPYRIGHT: (C)2005,JPO&NCIPI
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