发明名称 |
Programming circuit and method having extended duration programming capabilities |
摘要 |
An isolation circuit for coupling a large programming voltage from an external terminal to a circuit ground node includes an NMOS isolation transistor through which the programming voltage is coupled, and a charge pump that applies a voltage having at least the magnitude of the programming voltage to the gate of the NMOS transistor. As a result, the NMOS transistor is able to pass the full magnitude of the programming voltage to the circuit ground node. The charge pump can generate a voltage having a sufficient magnitude with only a single charge pump stage because the charge pump uses the relatively large programming voltage as the starting point for the voltage boosting process.
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申请公布号 |
US6949952(B2) |
申请公布日期 |
2005.09.27 |
申请号 |
US20040968446 |
申请日期 |
2004.10.18 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MECIER RICHARD A.;INGALLS CHARLES L. |
分类号 |
G11C5/14;G11C11/4074;G11C17/18;H02M3/07;H03K17/06;(IPC1-7):H03K19/173;H03K19/017 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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