发明名称 |
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device |
摘要 |
A group-III nitride crystal growth method, comprising the steps of: a) preparing a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal; b) growing a group-III nitride crystal of the group-III metal and nitrogen from the mixed molten liquid and a material at least comprising nitrogen; and c) setting a predetermined crystal growth condition according to a zone defined by a pressure and a temperature in said step b).
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申请公布号 |
US6949140(B2) |
申请公布日期 |
2005.09.27 |
申请号 |
US20020308149 |
申请日期 |
2002.12.03 |
申请人 |
RICOH COMPANY, LTD. |
发明人 |
SARAYAMA SEIJI;IWATA HIROKAZU;SHIMADA MASAHIKO;YAMANE HISANORI;AOKI MASATO |
分类号 |
C30B9/00;C30B11/00;(IPC1-7):C30B17/00 |
主分类号 |
C30B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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