| 发明名称 |
Temperature sensor for a MOS circuit configuration |
| 摘要 |
A temperature sensor for a MOS circuit configuration is implemented as the gate of a MOS transistor and configured as a two-terminal network with a gate input and a gate output. By measuring the voltage drop across gate it is possible to determine the temperature at its location.
|
| 申请公布号 |
US6948847(B2) |
申请公布日期 |
2005.09.27 |
| 申请号 |
US20030431902 |
申请日期 |
2003.05.08 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
PIHET ERIC;GLAVANOVICS MICHAEL;KROTSCHECK THOMAS;ZELSACHER RUDOLF |
| 分类号 |
G01K7/01;(IPC1-7):G01K7/01 |
主分类号 |
G01K7/01 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
