| 摘要 |
A thin-film transistor is provided which prevents the degradation of transistor characteristics due to ion channeling. A thin-film transistor (10) comprises thin crystalline silicon (2) including source and drain regions (2a) and a channel region (2b), which are formed on a substrate (1); a gate insulator (3) formed on the crystalline silicon (2); and a gate electrode (4) formed on the gate insulator (3). The gate electrode (4) includes an amorphous layer (5) and a crystalline layer (6). <IMAGE> |
