发明名称 |
TRANSISTOR STRUCTURE FOR USE IN SEMICONDUCTOR DEVICE AND METHOD THEREOF |
摘要 |
<p>A transistor structure and a method of forming the same prevent a boundary face of first and second gate electrodes from being oxidized in a subsequent oxidation process, by forming an oxidation inhibition layer in the boundary face. A gate insulation layer is formed on a semiconductor substrate, and a gate stack is obtained by a sequential accumulation of first and second gate electrodes and a capping layer on the gate insulation layer. An oxidation inhibition layer is formed in a sidewall portion of the gate stack, and the oxidation inhibition layer covers a boundary face of the first and second gate electrodes. Source/drain regions are opposite to the gate stack.</p> |
申请公布号 |
KR20050093083(A) |
申请公布日期 |
2005.09.23 |
申请号 |
KR20040018325 |
申请日期 |
2004.03.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, DAE IK;KWON, JOON MO;LEE, BYUNG HAK |
分类号 |
H01L29/78;H01L21/336;H01L21/8234;H01L27/108;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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