| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for simply and more accurately evaluating the number, intra-surface distribution, and density of crystal defects existing within a surface of a substrate, etc., as to an evaluation method wherein the substrate is etched by means of anisotropic etching to expose etching residues owing to crystal defects and the crystal defects are evaluated based on the etching residues. SOLUTION: This evaluation method for crystal defects is characterized in that crystal defects included within the substrate are evaluated by at least a process for previously measuring bright spots on a substrate surface to prepare a map for showing the positions of the bright spots on the substrate surface, a process for performing anisotropic etching of a high selection ratio on the substrate, a process for measuring bright spots on the substrate after etching to prepare a map showing the positions of the etching residues, and a process for comparing the map showing the positions of the etching residues with the map showing the positions of the previously measured bright spots on the substrate surface to eliminate etching residues existing at the same points as the bright spots on the substrate surface from the map showing the positions of the etching residues. COPYRIGHT: (C)2005,JPO&NCIPI
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