| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a patterning method by which retrogression of a desired pattern is suppressed at etching of an unnecessary pattern in patterning method using a phase shift mask. <P>SOLUTION: A processed layer pattern 4 is formed using an alternating phase shift mask, then ion implantation of an impurity is selectively carried out in the unnecessary pattern 4b to increase an etching rate of the unnecessary pattern 4b, after which the unnecessary pattern 4b is etched away. An etching time is shortened and a spreading amount α of an opening 6a of an etching mask 6 is suppressed by improving the etching rate of the unnecessary pattern 4b by the ion implantation. Moreover, even if the dimension of the opening 6a is increased only by α and a part of the desired pattern 4a which should not be essentially etched away is exposed, the retrogression of the pattern is suppressed, for the ion implantation is not carried out in the exposed desired pattern 4a and the etching rate is low. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
