| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent acceleration of exfoliation and cracking in a semiconductor element region, without lowering the productivity. SOLUTION: The semiconductor device 101 is one having a semiconductor element formation region 52, wherein a semiconductor element 7 is formed, and comprises a chip-like silicon substrate 1 having a principal plane whereon the semiconductor element 7 is formed, and interlayer insulation layers 2-5 which are formed on the principal plane of the silicon substrate 1 so as to cover the semiconductor element 7 and are extended farther outward than the semiconductor element formation region 52. The interlayer insulation layers 2-5 have recesses 22 so formed as to surround the semiconductor element forming region 52. The semiconductor device 101 is also provided with walls 24-29, which surround the semiconductor element formation region 52 by being formed inside the concaves 22. The outer wall surface 21 of the walls 24-29 along one side 51 of planar shape of the semiconductor element forming region 52 is constructed by a combination of a plurality of planes 21a-21i located on mutually different planes. COPYRIGHT: (C)2005,JPO&NCIPI |
