| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve throughput of an electron beam exposure method. <P>SOLUTION: The exposure method includes an effective chip exposure step (S202 and S204) wherein projection transfer exposure is applied to a semiconductor substrate by means of an effective chip area pattern having a plurality of kinds of subfield patterns in an effective chip area where a semiconductor chip can keep an effective shape, and a non-effective chip exposure step (S206) wherein projection transfer exposure is applied to the semiconductor substrate by means of a non-effective chip area pattern having nearly identical kinds of specified subfield patterns in a non-effective chip area where the semiconductor chip cannot keep an effective shape. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
