| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
As conductive patterns 11 A to 11 D are formed burying in a insulating resin 10 and a conductive foil 20 is formed being half-etched, thickness of the device is made thin. As an electrode for radiation 11 D is provided, a semiconductor device superior in radiation is provided.
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| 申请公布号 |
US2005206014(A1) |
申请公布日期 |
2005.09.22 |
| 申请号 |
US20050119439 |
申请日期 |
2005.04.29 |
| 申请人 |
SANYO ELECTRIC CO., LTD., A OSAKA, JAPAN CORPORATION |
发明人 |
SAKAMOTO NORIAKI;KOBAYASHI YOSHIYUKI;SAKAMOTO JUNJI;OKADA YUKIO;IGARASHI YUSUKE;MAEHARA EIJU;TAKAHASHI KOUJI;NAKAMURA TAKESHI |
| 分类号 |
H01L21/48;H01L23/31;H01L23/48;H01L23/495;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/48 |
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