发明名称 High frequency power amplifier module and wireless communication apparatus
摘要 The number of components of a high frequency power amplifier is reduced. A bias resistance ratio is adjusted in accordance with a change in the threshold voltage Vth of a transistor. A high frequency power amplifier has a plurality of amplifying systems. Each of these systems has an input terminal to which a signal to be amplified is supplied, an output terminal, a bias terminal, a plurality of amplifying stages which are sequentially cascaded between the input and output terminals, and a bias circuit connected to the bias terminal and each of the amplifying stages to apply a bias potential to the amplifying stage. The amplifying stage includes a control terminal for receiving an input signal and the bias potential supplied to the stage and a first terminal for transmitting an output signal of the stage.
申请公布号 US2005206456(A1) 申请公布日期 2005.09.22
申请号 US20050130120 申请日期 2005.05.17
申请人 RENESAS TECHNOLOGY CORP. 发明人 SUZUKI MASASHI;AKAMINE HITOSHI;ADACHI TETSUAKI;SATO TAKAHIRO;MARUYAMA MASASHI;TAKADA SUSUMU
分类号 H01L27/04;H01L21/822;H01L27/06;H03F1/30;H03F3/193;H03F3/20;H03F3/213;H03F3/24;H03F3/68;H03G3/30;H04B1/03;H04B1/04;(IPC1-7):H03F3/68 主分类号 H01L27/04
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