| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device containing a structure capable of enhancing the reliability of a semiconductor layer. <P>SOLUTION: The semiconductor device comprises a semiconductor layer 1a which is formed on a substrate 10A through middle layers 11, 12 at a given pattern. Regarding a surface roughness of the middle layer 12 arranged just under the semiconductor layer 1a, a difference in height between a projective top and a recess bottom in one cycle of a an uneven profile is 40 nm or less. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
