| 摘要 |
PROBLEM TO BE SOLVED: To provide an extremely high-quality SiC semiconductor wherein crystal defects by misfit dislocation are markedly reduced. SOLUTION: On an Si single-crystal substrate 2, a 3C-SiC single-crystal film 6 is formed with a c-BP single-crystal layer 4 and a 3C-SiC single-crystal layer 5 made of a carbonized Si single-crystal layer 5', which are formed on the Si single-crystal substrate 2 interposed in this order. COPYRIGHT: (C)2005,JPO&NCIPI
|
