发明名称 SEMICONDUCTOR DEVICE INCORPORATING THERMOELECTRIC ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide the structure of a thermoelectric element suitable for being incorporated in a semiconductor device. SOLUTION: The semiconductor device comprises a semiconductor substrate and a thermoelectric element formed thereon. The thermoelectric element comprises a first conductivity type region formed on the semiconductor substrate, a primary electrode connected electrically with one end of the first conductivity type region, and a secondary electrode connected electrically with the other end of the first conductivity type region. In the semiconductor device of such an arrangement, a temperature difference brought about by a current flowing between the primary and secondary electrodes can be used for cooling, heating, generating a heat flow, or controlling the temperature of the semiconductor substrate at least partially. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005259810(A) 申请公布日期 2005.09.22
申请号 JP20040066061 申请日期 2004.03.09
申请人 NIKON CORP 发明人 FUNAMIZU KO
分类号 H01L23/34;H01L35/32;H02N11/00;(IPC1-7):H01L35/32 主分类号 H01L23/34
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