发明名称 |
Method and apparatus to reduce storage node disturbance in ferroelectric memory |
摘要 |
Methods and ferroelectric devices are presented, in which pulses are selectively applied to ferroelectric memory cell wordlines to discharge cell storage node disturbances while the cell plateline and the associated bitline are held at substantially the same voltage.
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申请公布号 |
US2005207201(A1) |
申请公布日期 |
2005.09.22 |
申请号 |
US20040805809 |
申请日期 |
2004.03.22 |
申请人 |
MADAN SUDHIR K;LIN SUNG-WEI;MCADAMS HUGH P;SESHADRI ANAND;ELIASON JARROD |
发明人 |
MADAN SUDHIR K.;LIN SUNG-WEI;MCADAMS HUGH P.;SESHADRI ANAND;ELIASON JARROD |
分类号 |
G11C11/22;G11C11/24;(IPC1-7):G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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