| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a gate insulating film of high electrical reliability, by maintaining hydrogen termination to suppress the growth of a native oxide, and to provide a method of manufacturing the same. SOLUTION: The hydrogen termination on the wafer surface has been clarified on the degradation due to moisture adsorbed on the wafer surface; and in order to suppress the oxidation reaction by the moisture, the wafer surface is exposed to an inert-gas atmosphere containing H<SB>2</SB>gas, to improve the hydrogen termination of the wafer surface. COPYRIGHT: (C)2005,JPO&NCIPI
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