| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that suppresses the occurrence of a short circuit failure. SOLUTION: A low linear expansion insulating layer 16 in the perimeter of a via hole 19 is composed by using a film of poly methyl siloxane (relative dielectric constant =2.8, Young's modulus =5 GPa, coefficient of linear expansion =40×10<SP>-6</SP>°C<SP>-1</SP>) that is dispersed by the particulates of organic silicon oxide with a comparatively low coefficient of linear expansion (relative dielectric constant =3.0, Young's modulus =15 GPa, coefficient of linear expansion =10×10<SP>-6</SP>°C<SP>-1</SP>). COPYRIGHT: (C)2005,JPO&NCIPI |
