The present invention discloses a tunneling diode having a band gap material as the collector. This increases the tunneling of electrons having greater energy than the Fermi level from emitter to collector, leading to an increase in the efficiency of heat pumping or power generation by the diode. This approach also reduces back tunneling of electrons from collector to emitter.
申请公布号
WO2005031780(A3)
申请公布日期
2005.09.22
申请号
WO2004US31221
申请日期
2004.09.22
申请人
BOREALIS TECHNICAL LIMITED;MARTSINOVSKY, ARTEMI;COX, ISAIAH, W.