| 摘要 |
The invention seeks to provide a manufacturing method for an electro-optical device and semiconductor device which improve the shape of semiconductor layers in electro-optical devices and a semiconductor device having semiconductor layers with different thickness, enabling manufacturing with good yield. The manufacturing method comprises a patterning process for patterning a mono-crystalline silicone layer (semiconductor layer) 206 formed on a supporting substrate 10 with an insulating film 12 introduced therebetween into a predetermined two-dimensional shape and dividing the semiconductor layer 206 into a plurality of semiconductor regions 210 and 220, and a thin-layer formation process for performing thin-layer formation for forming the semiconductor layer 201 of a first semiconductor region 210, of the semiconductor regions 210 and 220 formed by the patterning process, to have a predetermined semiconductor layer thickness. <IMAGE> |
