发明名称 APPARATUS AND METHOD FOR TREATING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To effectively execute treatment of the lower surface of a substrate while suppressing running costs when treating the substrate, by approximately horizontally holding and rotating the substrate and supplying a treatment liquid to the substrate. SOLUTION: A treatment liquid supply tube 4 is inserted into the rotary shaft 3 of a spin chuck 1 for approximately horizontally holding and rotating a wafer W, and an overflow tray 10 is fixed on its upper end. The overflow tray 10 is positioned between a spin base 5 and the wafer W and forms a liquid film 7 of a treatment liquid. The overflow tray 10 is vertically moved by a lift drive mechanism 14 to make the liquid film 7 be in contact with a lower surface Wb of the wafer W. A resist release liquid is supplied into the overflow tray 10, and the liquid film 7 is in contact with the lower surface Wb of the wafer W, so that resist releasing treatment can be performed on upper and lower surfaces of the wafer W. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005260088(A) 申请公布日期 2005.09.22
申请号 JP20040071473 申请日期 2004.03.12
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 NIIHARA KAORU
分类号 H01L21/683;H01L21/027;H01L21/304;H01L21/68;(IPC1-7):H01L21/304 主分类号 H01L21/683
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