发明名称 |
Magnetic memory device and method of manufacturing the same |
摘要 |
A magnetic memory device includes a first interconnection which runs in a first direction, a second interconnection which runs in a second direction different from the first direction, a magnetoresistive element which is arranged at the intersection of and between the first and second interconnections, and a metal layer which is connected to the magnetoresistive element and has a side surface that partially coincides with a side surface of the magnetoresistive element.
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申请公布号 |
US2005208682(A1) |
申请公布日期 |
2005.09.22 |
申请号 |
US20050135337 |
申请日期 |
2005.05.24 |
申请人 |
NAKAJIMA KENTARO;HOSOTANI KEIJI |
发明人 |
NAKAJIMA KENTARO;HOSOTANI KEIJI |
分类号 |
H01L27/105;H01L21/00;H01L21/8246;H01L27/22;H01L29/76;H01L31/062;H01L43/08;H01L43/12;(IPC1-7):H01L21/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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