Semiconductor component having an integrated capactiance structure and method for producing the same

摘要

A semiconductor component has an insulating layer which is formed on a semiconductor substrate and in which a capacitance structure (K) is formed. The capacitance structure (K) has at least two metallization planes ( 1 to 7 ) which are arranged parallel to one another and are each connected to an electrical connecting line. Arranged between the metallization planes ( 1 to 7 ) is at least one electrically conductive region ( 1 a to 1 j ; 2 a to 2 j ; 31 a to 36 a ; 41 a to 46 a ; 5 a to 5 f) for producing a capacitance surface, the electrically conductive region ( 1 a to 1 j; 2 a to 2 j ; 31 a to 36 a ; 41 a to 46 a ; 5 a to 5 f) being electrically connected only to one of the metallization planes ( 1 to 7 ).