CMOS CIRCUIT USING DOUBLE INSULATED GATE FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a CMOS circuit made of a four-terminal double insulated gate field effect transistor in which current of a P type insulated gate field effect transistor and current of an N type insulated gate field effect transistor are made to be the same and in addition, power consumption in a circuit unit when in an unused or standby state is reduced.

SOLUTION: Two gate electrodes of a P type four-terminal double insulated gate field effect transistor are electrically connected, further electrically connected to one gate electrode of an N type four-terminal double insulated gate field effect transistor to provide an input terminal of a CMOS inverter circuit, and the potential of the other gate electrode of the N type four-terminal double insulated gate field effect transistor is controlled to thereby control a threshold voltage of the N type four-terminal double insulated gate field effect transistor.

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