| 摘要 |
PROBLEM TO BE SOLVED: To shorten a distance between a line to write data in and an MTJ in a damascine structure while at the same time keeping the reliability, in a magnetic random access memory having a cell array structure wherein an interlayer is formed on an MTJ element by a damascine process through a cap layer. SOLUTION: On the MTJ element MTJ, the cap layer 16 is arranged. An insulation layer 15 covers the MTJ element MTJ and the cap layer 16, and its top face is flush with that of the cap layer 16. On top of the insulation layer 15, the other insulation layer 19 is arranged. The insulation layer 19 has an interconnection recess 20 above the cap layer 16. A write bit line 25 is arranged in the interconnection recess 20. An insulation layer 18 has etch selectivity with respect to at least the insulation layers 15 and 19, and is located between the insulation layers 15 and 19, except on the bottom of the interconnection recess 20. COPYRIGHT: (C)2005,JPO&NCIPI
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