发明名称 |
BI-DIRECTIONAL POWER SWITCH |
摘要 |
A semiconductor device that is comprised to two or more MOSFETs to form a bi-directional power switch. One embodiment of the bi-directional switch is comprised of (a) a semiconductor substrate having an upper surface and a lower surface; (b) a first region of a first conductivity type in said semiconductor substrate and proximate to said upper surface; (c) a first source region and a second source region of a second conductivity type within said first region; (d) a drain region of a second conductivity type formed within said first region and proximate to said upper surface and between said first and second source regions; (e) a first source overlaying and connecting said first source region; (f) a second source overlaying and connecting said second source region; (g) a first gate above said upper surface and placed between said first source and said second source wherein said first gate overlays a portion of said first source region and said drain region; (h) a second gate above said upper surface and placed between said second source and said first gate wherein said second gate overlays a portion of said second source region and said drain region. |
申请公布号 |
WO2004070791(A3) |
申请公布日期 |
2005.09.22 |
申请号 |
WO2004US03051 |
申请日期 |
2004.02.04 |
申请人 |
GREAT WALL SEMICONDUCTOR |
发明人 |
SHEN, ZHENG;OKADA, DAVID, NOBORU |
分类号 |
H01L27/07;H01L27/088;H01L29/08;H01L29/417;H01L29/423;H01L29/78 |
主分类号 |
H01L27/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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