| 摘要 |
<P>PROBLEM TO BE SOLVED: To control an effect due to a concentration of internal stress. <P>SOLUTION: A semiconductor device includes a semiconductor chip 10, in which an integrated circuit is formed, has a polygonal surface 14, and a plurality of electrodes 16 electrically connected with the inside are located on the polygonal surface 14; a first resin layer 30 which is formed on the polygonal surface 14 of the semiconductor device 10; a wiring 34 which contains a first and second portions positioned on the first resin layer 30; external terminals 40 which are located on the first portion of the wiring 34; and a second resin layer 50, which are formed on the first layer 30 so as to cover the second portion of the wiring 34, The plurality of electrodes 16 are arranged along a second side 22 left, except for at least one first side 20 of the polygonal surface 14, and the second resin layer 50 is formed to keep away from the region between the side edge 32 positioned on the the first side 20 of the first resin layer 30 and the first side 20. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
