| 摘要 |
PROBLEM TO BE SOLVED: To form an oxide film at a speed higher than in a prior art while avoiding the deterioration of homogeneity even for a large substrate and allowing an inexpensive glass substrate to be employed at a low cost. SOLUTION: A ECR plasma 111 is applied to the surface of a substrate 101 to form a state that activated oxygen has been irradiated, and a substrate 101 is formed in that state. Thereafter, the substrate 101 is put in a hydrogen gas atmosphere 120 and heated, for example, at 400°C. Heating the substrate in the hydrogen gas atmosphere 120 causes the extinguishment of a dangling bond or the like slightly present in the gate oxide film 102, thus improving the quality of the gate oxide film 102. COPYRIGHT: (C)2005,JPO&NCIPI
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