发明名称 METHOD OF DRIVING A FIELD EFFECT TRANSISTOR
摘要 <p>A method for driving a field-effect transistor having a source section, a drain section and a gate section, includes applying a gate voltage to the gate section and causing the formation and/or maintenance of an electrically conductive channel between the source section and the drain section. After the channel has been formed, the gate section is disconnected from a gate voltage supply source which applies the gate voltage to the gate section.</p>
申请公布号 EP0808512(B1) 申请公布日期 2005.09.21
申请号 EP19960945746 申请日期 1996.11.21
申请人 INFINEON TECHNOLOGIES AG 发明人 SEDLAK, HOLGER
分类号 H03K17/06;G11C8/00;H01L27/02;(IPC1-7):H01L27/02 主分类号 H03K17/06
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